DocumentCode
435915
Title
A simulation model of body contact structure in PD SOI analogue circuit
Author
Fan, Jiang ; Zhong-Li, Liu
Author_Institution
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
1019
Abstract
As a solution of accurate simulation of the body effect in PD SOI analogue circuit, a simulation model of distributed body contact resistance and parasitical capacitance is presented. Based on this model, we have designed and simulated a sense amplifier that applied to a 0.8μm PD SOI 64K SRAM.
Keywords
SRAM chips; amplifiers; analogue circuits; contact resistance; silicon-on-insulator; 0.8 micron; PD SOI analogue circuit; SRAM; body contact structure; distributed body contact resistance; parasitical capacitance; sense amplifier; Charge pumps; Circuit simulation; Contact resistance; Diodes; Immune system; MOSFET circuits; Parasitic capacitance; Random access memory; SPICE; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436679
Filename
1436679
Link To Document