Defects in ion implantation and annealing studied by atomistic model

Atomistic modeling has been applied in studying and simulating the advanced junction technologies. We present in this paper the application of molecular dynamics method in simulation of amorphization ion implantation and that of kinetic Monte Carlo method in simulation of annealing. Roughness at amorphous/crystal (a/c) interface is interpreted as transition field and related to the steepness of defects profile. The dissipation of Si extended defects are simulated for both 40kev and 5kev Si implantation. Evolution of extended defects for low energy implantation is well simulated. The simulation indicates that at the initial stage of annealing, the density of extended defects should be larger than that predicted by +1 model.