MOSFET modeling for RF-circuit simulation

Author

Miura-Mattausch, M. ; Mattausch, Hans Jurgen ; Ohguro, T. ; Iizuka, T. ; Taguchi, M. ; Kumashiro, S. ; Miyamoto, S.

Author_Institution

Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Japan

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

1118

Abstract

Under radio-frequency operation of MOSFETs, not only conventional 1-V characteristics and their derivatives but also higher-order phenomena have to be modeled accurately for reliable circuit performance prediction. To reproduce such critical device characteristics model development tends to follow device physics as much as possible. The surface-potential distribution, which is the origin of all device features, is the key modeling quantity and leads to straightforward description accurate even for higher-order phenomena. This is demonstrated with the circuit simulation model HiSIM for the cases of noise modeling, small-signal analysis as well as large-signal analysis.

Keywords

MOSFET circuits; circuit simulation; integrated circuit noise; radiofrequency integrated circuits; surface potential; HiSIM; MOSFET modeling; RF-circuit simulation; circuit performance prediction; critical device characteristics model development; large-signal analysis; noise modeling; radio-frequency operation; small-signal analysis; surface-potential distribution; Current measurement; Fluctuations; Frequency measurement; MOSFET circuits; Noise measurement; Noise reduction; Petroleum; Scattering; Semiconductor device measurement; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436711

Filename

1436711