Device Performance of Silicon Nanotube Field Effect Transistor

Author

Tekleab, Daniel

Author_Institution

IBM, Hopewell Junction, NY, USA

Volume

35

Issue

5

fYear

2014

fDate

May-14

Firstpage

506

Lastpage

508

Abstract

The device performance of silicon nanotube field effect transistor (Si-NT-FET) having tubular channel and controllable by an inner and outer gates is presented. The inner and outer gates render effective charge control inside the channel providing the Si-NT-FETs excellent immunity to short channel effects. Evaluations of electrical performances of Si-NT-FET using well calibrated 3D device simulations show that Si-NT-FETs can outperform Si-nanowire (NW)-FETs in terms of drive currents and SCEs. Our evaluation further shows that Si-NT-FETs can provide ~2× higher drive current compared to Si-NT-FET of the same diameter. This excellent electrical performance makes Si-NT-FETs promising candidates to extend CMOS scaling roadmap beyond Si-NW-FET.

Keywords

CMOS integrated circuits; carbon nanotube field effect transistors; elemental semiconductors; nanowires; silicon compounds; 3D device simulations; CMOS scaling roadmap; NT-FET; NW-FET; SCE; Si; device performance; drive currents; effective charge control; electrical performances; inner gates; nanotube field effect transistor; nanowire NW-FET; outer gates; short channel effects; tubular channel; Logic gates; MOSFET; Performance evaluation; Periodic structures; Silicon; Three-dimensional displays; 3D MOSFET; nanotube; nanowire; trigate; trigate.;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2310175

Filename

6776400