Selective area growth of AlGaInAs for spot-size converter integrated laser diode

Author

Bang, Y.C. ; Kim, H.S. ; Kim, J.Y. ; Lee, E.H. ; Lee, J.K. ; Kim, T.I.

Author_Institution

Telecommun. R&D Center, Samsung Electron. Co., Suwon, South Korea

fYear

2004

fDate

31 May-4 June 2004

Firstpage

142

Lastpage

145

Abstract

AlGaInAs selective area growth on a masked InP substrate has been investigated to develop a spot-size converter integrated laser diode. After migration blocking area was applied to suppress surface migration effect, selective grown AlGaInAs layer shows improved characteristics in PL measurement. The threshold current was 25 mA and 62 mA at 25 °C and 85 °C, respectively. The FWHMs (full width at half maximum) of horizontal and vertical far field pattern were reduced from 25°; and 42° into 22° and 30°, respectively.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; optical waveguides; photoluminescence; ridge waveguides; semiconductor growth; semiconductor lasers; 25 degC; 25 mA; 62 mA; 85 degC; AlGaInAs-InP; InP; PL measurement; migration blocking area; selective area growth; spot-size converter integrated laser diode; surface migration effect; threshold current; Diode lasers; Epitaxial growth; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442631

Filename

1442631