• DocumentCode
    439500
  • Title

    A high-efficiency back-bias generator with cross-coupled hybrid pumping circuit for sub-1.5 V DRAM applications

  • Author

    Min, Kyeong-Sik ; Jin, Kyo-Won ; Kim, Ji-Beom

  • Author_Institution
    Hyundai Electronics Industries Co., Ltd., Cheongju-si, Korea
  • fYear
    2000
  • fDate
    19-21 Sept. 2000
  • Firstpage
    188
  • Lastpage
    191
  • Abstract
    Based on the study about the previously developed back-bias generators, a new high-efficiency back-bias generator with the Cross-coupled Hybrid Pumping Circuit 2 (CHPC2) is presented in this paper. CHPC2 takes only the advantages from the previous ones, throwing away the disadvantages. CHPC2 shows |VBB|/VCCas large as 98% even at low VCC=0.9 V, strongly addressing that it will be suitable at low voltage DRAM applications. Moreover, CHPC2 exhibits much better pumping efficiency and larger pumping current over the previous ones with wide RLrange at VCC=1.2 V.
  • Keywords
    Capacitance; Circuits; Electronics industry; Hybrid power systems; Low voltage; MOS devices; Random access memory; Subthreshold current; Switches; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
  • Conference_Location
    Stockholm, Sweden
  • Type

    conf

  • Filename
    1471243