DocumentCode
439500
Title
A high-efficiency back-bias generator with cross-coupled hybrid pumping circuit for sub-1.5 V DRAM applications
Author
Min, Kyeong-Sik ; Jin, Kyo-Won ; Kim, Ji-Beom
Author_Institution
Hyundai Electronics Industries Co., Ltd., Cheongju-si, Korea
fYear
2000
fDate
19-21 Sept. 2000
Firstpage
188
Lastpage
191
Abstract
Based on the study about the previously developed back-bias generators, a new high-efficiency back-bias generator with the Cross-coupled Hybrid Pumping Circuit 2 (CHPC2) is presented in this paper. CHPC2 takes only the advantages from the previous ones, throwing away the disadvantages. CHPC2 shows |VBB |/VCC as large as 98% even at low VCC =0.9 V, strongly addressing that it will be suitable at low voltage DRAM applications. Moreover, CHPC2 exhibits much better pumping efficiency and larger pumping current over the previous ones with wide RL range at VCC =1.2 V.
Keywords
Capacitance; Circuits; Electronics industry; Hybrid power systems; Low voltage; MOS devices; Random access memory; Subthreshold current; Switches; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
Conference_Location
Stockholm, Sweden
Type
conf
Filename
1471243
Link To Document