• DocumentCode
    439747
  • Title

    A fully integrated class 1 bluetooth 0.25 µm CMOS PA

  • Author

    Mertens, K. ; Steyaert, M.

  • Author_Institution
    K.U.Leuven, Heverlee, Belgium
  • fYear
    2002
  • fDate
    24-26 Sept. 2002
  • Firstpage
    219
  • Lastpage
    222
  • Abstract
    A fully integrated 0.25µm CMOS bluetooth class 1 power amplifier is presented. On this chip all inductors and decoupling capacitors are situated on the silicon die. Due to the high level of integration a cheap flip chip assembly method has been used. The chip delivers 138mW (21.4dBm) of output power with a power added efficiency of 25.8%. When the amplifier is tuned to its optimum frequency of 2.1GHz, the output power increases to 184mW and the power added efficiency to 29.5%.
  • Keywords
    Bluetooth; Bonding; Capacitors; Frequency; High power amplifiers; Inductors; Power amplifiers; Power transistors; Voltage; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2002. ESSCIRC 2002. Proceedings of the 28th European
  • Conference_Location
    Florence, Italy
  • Type

    conf

  • Filename
    1471505
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439747