• DocumentCode
    439964
  • Title

    Planar indium antimonide n-channel IGFET by proton bombardment

  • Author

    Pond, R.J. ; Yon, E.T.

  • Volume
    17
  • fYear
    1971
  • fDate
    1971
  • Firstpage
    30
  • Lastpage
    32
  • Abstract
    Low leakage n on p diodes have been fabricated using a proton bombardment technique. These diodes typically exhibit less than 1µa of reverse current at 5 volts reverse bias for a 13.6 × 13.6 mil junction area. Breakdown voltages of about 10 volts are obtained for material with a bulk acceptor concentration of 1-2 \\times 10^{14} cm--3.
  • Keywords
    FETs; Frequency; Gallium arsenide; Germanium alloys; Indium; Laboratories; Protons; Solid state circuits; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1971 International
  • Conference_Location
    IEEE
  • Type

    conf

  • Filename
    1476696
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439964