Circuit modeling of RF capacitive MEMS switch

Author

Buccella, C. ; Feliziani, M. ; Manzi, G.

Author_Institution

Dept. of Electr. Eng., L´Aquila Univ., Italy

Volume

3

fYear

2005

fDate

20-23 June 2005

Firstpage

1117

Abstract

The frequency and transient behaviours of electrostatically activated MEMS shunt switch networks are investigated. The frequency range 0-40 GHz is considered. A two-dimensional electro-mechanical model of the MEMS switch is solved by a numerical technique based on the finite element method (FEM) solution in a deforming computation domain. The MEMS equivalent electrical circuit is extracted by the FEM solution and is analyzed by a circuit CAD simulator. Transient voltages at the output port of the MEMS switch are computed for different electrogeometrical configurations.

Keywords

circuit CAD; electrostatic devices; equivalent circuits; finite element analysis; microswitches; 0 to 40 GHz; FEM solution; MEMS shunt switch networks; RF capacitive MEMS switch; circuit CAD simulator; equivalent electrical circuit; finite element method solution; two-dimensional electro-mechanical model; Analytical models; Circuit analysis; Circuit simulation; Computational modeling; Deformable models; Finite element methods; Micromechanical devices; Microswitches; Radio frequency; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, 2005. ISIE 2005. Proceedings of the IEEE International Symposium on

Conference_Location

Dubrovnik, Croatia

Print_ISBN

0-7803-8738-4

Type

conf

DOI

10.1109/ISIE.2005.1529080

Filename

1529080