• DocumentCode
    445357
  • Title

    Vertical high mobility wrap-gated inas nanowire transistor

  • Author

    Bryllert, Tomas ; Samuelson, Lars ; Jensen, Linus E. ; Wernersson, Lars-Erik

  • Volume
    1
  • fYear
    2005
  • fDate
    22-22 June 2005
  • Firstpage
    157
  • Lastpage
    158
  • Abstract
    We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm2/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of Vg = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude
  • Keywords
    III-V semiconductors; electron mobility; field effect transistors; indium compounds; nanowires; -0.15 V; InAs; current saturation; high mobility; nanowire transistor; sub threshold characteristics; transconductance; wrap gated field effect transistor; Dielectric substrates; Epitaxial growth; FETs; Gold; Laboratories; Lithography; Microwave transistors; Physics; Solid state circuits; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553100
  • Filename
    1553100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=445357