Counterintuitive behavior of electron temperature in terahertz-driven heterojunctions

Author

Cao, J.C.

Author_Institution

Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai, China

Volume

1

fYear

2005

fDate

19-23 Sept. 2005

Firstpage

146

Abstract

We have studied electron transport and electron-hole pair generation-recombination rate in terahertz-driven InAs/AlSb heterojunctions (HJ). As many as needed multiphoton channels are self-consistently taken into account. Usually, II acts as a cooling mechanism of semiconductor. In the present THz-radiation-driven case with multiphoton process the electron temperature with II process, however, is higher than that without this process. We propose to explain the counterintuitive behavior of electron temperature.

Keywords

III-V semiconductors; aluminium compounds; electron transport theory; electron-hole recombination; indium compounds; semiconductor heterojunctions; two-photon processes; InAs-AlSb; counterintuitive behavior; electron temperature; electron transport; electron-hole pair; generation-recombination rate; multiphoton channels; multiphoton process; semiconductor cooling mechanism; terahertz-driven heterojunctions; Cooling; Electrons; Electrooptic effects; Equations; Frequency; Heterojunctions; Impact ionization; Impurities; Scattering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on

Print_ISBN

0-7803-9348-1

Type

conf

DOI

10.1109/ICIMW.2005.1572450

Filename

1572450