Receiver measurements of pHEB beam lead mixers on 3-μm silicon

Author

Bryerton, E. ; Percy, R. ; Bass, R. ; Schultz, J. ; Oluleye, O. ; Lichtenberger, A. ; Ediss, G.A. ; Pan, S.K. ; Goltsman, G.N.

Author_Institution

National Radio Astron. Obs., Charlottesville, VA, USA

Volume

1

fYear

2005

fDate

19-23 Sept. 2005

Firstpage

271

Abstract

We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz.

Keywords

UHF devices; elemental semiconductors; microwave mixers; microwave receivers; silicon; 3 micron; 500 K; 600 to 720 GHz; 666 GHz; Si; array integration; integrated beam lead; mixer performance; pHEB beam lead mixer; receiver noise measurement; ultra-thin mixer chip; Assembly; Dielectric losses; Dielectric substrates; Extraterrestrial measurements; Frequency; Microstrip; Noise measurement; Receivers; Silicon on insulator technology; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on

Print_ISBN

0-7803-9348-1

Type

conf

DOI

10.1109/ICIMW.2005.1572513

Filename

1572513