DocumentCode
447961
Title
High-brightness, high-efficiency 940-980nm InGaAs/AlGaAs/GaAs broad waveguide diode lasers
Author
Zuntu Xu ; Wei Guo ; Cheng, L. ; Nelson, A. ; Luo, K. ; Mastrovito, A. ; Yang, T.
Author_Institution
Axcel Photonics, Inc., Marlborough, MA
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
420
Lastpage
422
Abstract
High brightness, weak temperature dependent, InGaAs/AlGaAs/GaAs broad waveguide lasers with 100-mum aperture are presented. A record high CW output power of 15 W and a high slope efficiency of 1.0 W/A were achieved at 25 degC
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; semiconductor lasers; waveguide lasers; 100 micron; 15 W; 25 C; 940 to 980 nm; CW output laser power; InGaAs-AlGaAs-GaAs; broad waveguide diode lasers; slope efficiency; Biomedical optical imaging; Diode lasers; Gallium arsenide; Indium gallium arsenide; Optical pumping; Optical waveguides; Power generation; Power lasers; Temperature dependence; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Conference_Location
Baltimore, MD
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.201799
Filename
1572865
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