Pulsed vs. CW power performance of InGaP/GaAs HBTs

Author

Halder, Sebastian ; Hwang, James C. M.

Author_Institution

Lehigh Univ., Bethlehem, PA, USA

Volume

1

fYear

2005

fDate

4-7 Dec. 2005

Abstract

Load-pull power and waveform measurements were performed on C-band InGaP/GaAs heterojunction bipolar transistors of various sizes. In general, pulsed output power was found to be 2-4dB higher than CW output power. Based on the measured dynamic load lines, the higher output power can be attributed to higher peak current and higher breakdown voltage under pulsed conditions. From the measured harmonic contents, pulsed operation was also found to be more linear than CW operation, probably due to the absence of thermally induced weak nonlinearity under pulsed conditions.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; power bipolar transistors; semiconductor device breakdown; C-band heterojunction bipolar transistors; CW operation; InGaP-GaAs; breakdown voltage; dynamic load lines; load-pull power measurement; pulsed operation; waveform measurement; Gallium arsenide; Heterojunction bipolar transistors; Power generation; Power measurement; Probes; Pulse generation; Pulse measurements; Pulsed power supplies; Radio frequency; Time measurement; C-band; Heterojunction bipolar transistor; RF power; harmonic; load-pull measurement; pulsed measurement; waveform;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606230

Filename

1606230