• DocumentCode
    453673
  • Title

    A new structure of low-noise CMOS differential amplifier

  • Author

    Lan, Wei ; Gao Jim ; Zhongjian, Chen ; Lijiu, Ji

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • Volume
    1
  • fYear
    2005
  • fDate
    24-27 Oct. 2005
  • Firstpage
    360
  • Lastpage
    364
  • Abstract
    A new structure of low-noise CMOS differential amplifier has been presented in this paper. The structure is mainly based on a load of common-gate MOSFETs with resistances in series at sources (CG-R load), which does not increase complication of the circuit. This structure decreases 1/f noise of the load by a (1 + gm2R) 2 coefficient, while keeps the voltage gain high. The simulation result for the given example reveals an average reduction of 90% for load noise at low frequencies, compared with current-mirror load (CM load).
  • Keywords
    1/f noise; CMOS analogue integrated circuits; differential amplifiers; integrated circuit noise; 1-f noise; common gate MOSFET; low noise CMOS differential amplifier; Circuit noise; Differential amplifiers; Frequency; Integrated circuit noise; Low-frequency noise; MOSFETs; Noise generators; Noise reduction; Thermal resistance; Voltage; 1/f noise; CMOS; amplifier; differential; low noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2005. ASICON 2005. 6th International Conference On
  • Print_ISBN
    0-7803-9210-8
  • Type

    conf

  • DOI
    10.1109/ICASIC.2005.1611337
  • Filename
    1611337
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=453673