Growth of Grains Effect on Boron Diffusion in Heavily Implanted Polysilicon Thin Films

Author

Abadli, Salah ; Mansour, Farida

Author_Institution

Dept. of Electron., Univ. Hassiba Benbouali of Chief

Volume

1

fYear

2006

fDate

5-7 Sept. 2006

Firstpage

319

Lastpage

323

Abstract

A one-dimensional tow stream diffusion model adapted to the granular structure of polysilicon and to the effects of the strong concentrations has been developed. This model includes dopant clustering in grains as well as in grain boundaries. In addition, growth of grains and energy barrier height are coupled with the dopant diffusion coefficients and the process temperature based on thermodynamic concepts. The trapping-emission mechanism between grains and grain boundaries and crystallisation are the major effects during thermal annealing process. The adjustment of the simulated profiles with the experimental SIMS profiles for short treatment times ranging between 1 and 30 minutes at the temperature of 700degC allowed the validation of this model

Keywords

annealing; boron; crystallisation; grain boundary diffusion; grain growth; grain size; heavily doped semiconductors; ion implantation; semiconductor doping; semiconductor thin films; 1 to 30 mins; 1D tow stream diffusion model; 700 C; SIMS profiles; boron; crystallisation; dopant clustering; dopant diffusion coefficients; energy barrier height; grain boundaries; grain growth; granular structure; heavily implanted polysilicon thin films; thermal annealing process; thermodynamic concepts; trapping-emission mechanism; Annealing; Boron; Circuits; Doping profiles; Grain boundaries; Ion implantation; Semiconductor process modeling; Silicon; Temperature distribution; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Systemintegration Technology Conference, 2006. 1st

Conference_Location

Dresden

Print_ISBN

1-4244-0552-1

Electronic_ISBN

1-4244-0553-x

Type

conf

DOI

10.1109/ESTC.2006.280018

Filename

4060742