DocumentCode
462300
Title
Monolithic Sensors for Charged-Particle Imaging using Per-Pixel Correlated Double Sampling
Author
Ahooie, Mona ; Kleinfelder, Stuart
Author_Institution
California Univ., Irvine, CA
Volume
1
fYear
2006
fDate
Oct. 29 2006-Nov. 1 2006
Firstpage
54
Lastpage
58
Abstract
Monolithic CMOS cameras for direct imaging in electron microscopy and other radiation imaging applications have been developed, including complete cameras of up to 1 M-pixels, and have been used to capture images with superior resolution to that of commercial CCD-based systems. Optimizations for these sensors have been made via simulation and experiment, including studies of the impact of epitaxial silicon ionization region thickness, pixel pitch and diode size optimizations, and per-pixel correlated double sampling (CDS) technology. The per-pixel CDS scheme has demonstrated reductions in kT/C noise by a factor of four. It requires only one read instead of two reads plus pre- and post-integration subtraction, and is hence faster than alternate schemes. In addition, observation of Random Telegraph Signal noise (RTS) in small-capacitance pixels is demonstrated.
Keywords
CMOS image sensors; electron microscopy; CCD-based systems; charged-particle imaging; diode size optimizations; electron microscopy; epitaxial silicon ionization region thickness; monolithic CMOS cameras; monolithic sensors; per-pixel correlated double sampling; pixel pitch; radiation imaging applications; random telegraph signal noise; CMOS image sensors; Cameras; Charge-coupled image sensors; Electron microscopy; Image resolution; Image sampling; Ionizing radiation sensors; Radiation imaging; Sampling methods; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location
San Diego, CA
ISSN
1095-7863
Print_ISBN
1-4244-0560-2
Electronic_ISBN
1095-7863
Type
conf
DOI
10.1109/NSSMIC.2006.356107
Filename
4178946
Link To Document