Trapping of Electrons and Holes in p-type Silicon Irradiated with Neutrons

Author

Cindro, Vladimir ; Kramberger, Gregor ; Lozano, Manuel ; Mandic, Igor ; Mikuz, Marko ; Pellegrini, Giulio ; Pulko, Joef ; Ullan, Miguel ; Zavrtanik, Marko

Author_Institution

Jozef Stefan Inst., Ljubljana

Volume

1

fYear

2006

fDate

Oct. 29 2006-Nov. 1 2006

Firstpage

139

Lastpage

142

Abstract

Trapping times of drifting electrons and holes were measured in high resistivity standard, oxygenated and magnetic Czochralski p-type materials with charge correction method. Diodes were irradiated with neutrons up to equivalent fluence Phi = 3 times 10¹⁴ cm^-2. Trapping times were parameterized as 1/tau = betaPhi. Average beta was measured to be beta_e = 4.2 times 10^-16 cm² ns^-1 for electrons and beta_h = 4.3 times 10^-16 cm² ns^-1 for holes.

Keywords

electron traps; elemental semiconductors; hole traps; magnetic materials; neutron effects; silicon; silicon radiation detectors; Si; charge correction method; diodes; electron trapping; hole trapping; magnetic Czochralski p-type material; p-type silicon; trapping time; Charge carrier processes; Charge measurement; Conductivity; Current measurement; Diodes; Electron traps; Magnetic materials; Measurement standards; Neutrons; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2006. IEEE

Conference_Location

San Diego, CA

ISSN

1095-7863

Print_ISBN

1-4244-0560-2

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2006.356125

Filename

4178964