Temperature-Compensated High-Frequency Surface Acoustic Wave Device

Author

Changjian Zhou ; Yi Yang ; Hualin Cai ; Tian-Ling Ren ; Mansun Chan ; Yang, Cary Y.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

34

Issue

12

fYear

2013

fDate

Dec. 2013

Firstpage

1572

Lastpage

1574

Abstract

We report high-frequency surface acoustic wave (SAW) devices with excellent temperature stability using a layered structure consisting of single-crystal LiNbO₃ thin film on SiO₂/LiNbO₃ substrate. SAW devices with a wavelength of 2 μm have been fabricated and several wave modes ranging from ~ 1.5 to 2.1 GHz have been obtained. With the SiO₂ interlayer providing the temperature compensation and the top single-crystal Z-cut LiNbO₃ piezoelectric thin film for acoustic wave excitation, the fabricated SAW devices exhibit excellent temperature coefficients of frequency. Theoretical calculations are presented to elucidate temperature compensation of the proposed layered structure.

Keywords

piezoelectric thin films; stability; surface acoustic wave devices; SAW devices; SiO₂-LiNbO₃; acoustic wave excitation; high-frequency surface acoustic wave device; layered structure; piezoelectric thin film; single-crystal thin film; temperature compensation; temperature stability; temperature-compensated acoustic wave device; top single-crystal Z-cut; wavelength 2 mum; Lithium niobate; Radio frequency; Substrates; Surface acoustic wave devices; Surface acoustic waves; Thin films; ${rm LiNbO}_{3}$ thin film; radio frequency; surface acoustic wave (SAW); temperature compensation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2283305

Filename

6627930