DocumentCode
467138
Title
Gain-Bandwidth Properties of 0.18μm Si-CMOS Transistor up to 10 GHz
Author
Yarman, B. Siddik ; Retdian, Nicodimus ; Takagi, Shigetaga ; Fujii, Nobuo
Author_Institution
Istanbul Univ, Istanbul
Volume
1
fYear
2007
fDate
13-14 July 2007
Firstpage
1
Lastpage
4
Abstract
In this paper, gain bandwidth limitations of a regularly processed 0.18 μm Si CMOS FET is investigated over the frequency band of 450 MHz-10 GHz. It is exhibited that 0.18 μm Si CMOS processing technology can safely be utilized to manufacture ultra wideband RF-amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.
Keywords
CMOS integrated circuits; UHF field effect transistors; microwave field effect transistors; radiofrequency amplifiers; ultra wideband communication; 0.18 μm Si-CMOS transistor; FET; commercial wireless communication system; field effect transistor; frequency 450 MHz to 10 GHz; gain-bandwidth properties; size 0.18 μm; ultrawideband RF-amplifier; Bandwidth; Broadband amplifiers; CMOS process; CMOS technology; Equalizers; FETs; Radio frequency; Radiofrequency amplifiers; Transducers; Ultra wideband technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Signals, Circuits and Systems, 2007. ISSCS 2007. International Symposium on
Conference_Location
Iasi
Print_ISBN
1-4244-0968-3
Electronic_ISBN
1-4244-0969-1
Type
conf
DOI
10.1109/ISSCS.2007.4292652
Filename
4292652
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