• DocumentCode
    472631
  • Title

    Stacked SOI CMOS Fabricated with Seeding Lateral Epitaxy

  • Author

    Yoshimi, M. ; Suguro, K. ; Takahashi, M. ; Hamasaki, T. ; Inoue, T. ; Yoshii, T. ; Taniguchi, K. ; Tango, H.

  • Author_Institution
    VLSI Research Center, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, Japan
  • fYear
    1985
  • fDate
    14-16 May 1985
  • Firstpage
    26
  • Lastpage
    27
  • Keywords
    Annealing; Electron beams; Epitaxial growth; Fabrication; Grain boundaries; Position control; Ring oscillators; Silicon on insulator technology; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1985. Digest of Technical Papers. Symposium on
  • Conference_Location
    Kobe, Japan
  • Print_ISBN
    4-930813-09-3
  • Type

    conf

  • Filename
    4480286
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472631