High Density Fetmos Eeprom Cell Using ONO Inter-Polysilicon Dielectrics

Author

Kuo, Clinton ; Fu, Kuan ; Kim, Peter ; Chonko, Mark ; Jorvig, Jeff ; Yeargain, John R. ; Barnes, John J.

Author_Institution

MOS Memory Group, Motorola Inc. Austin, Texas 78721

fYear

1985

fDate

14-16 May 1985

Firstpage

Lastpage

Keywords

Dielectric substrates; EPROM; Electrons; Equations; Lithography; MOSFETs; Merging; Nonvolatile memory; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1985. Digest of Technical Papers. Symposium on

Conference_Location

Kobe, Japan

Print_ISBN

4-930813-09-3

Type

Filename

4480322

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