DocumentCode

472806

Title

Reactive Ion Beam Etching for VLSI

Author

Hakhu, J.K.

Author_Institution

Rockwell International Microelectronics Research and Development Ctr. Anaheim, CA 92803

fYear

1981

fDate

9-11 Sept. 1981

Firstpage

66

Lastpage

67

Keywords

Acceleration; Aluminum alloys; Circuits; Costs; Etching; Ion beams; Plasma applications; Resists; Silicon; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1981. Digest of Technical Papers. Symposium on

Conference_Location

Maui, HI, USA

Type

conf

Filename

4480529