DocumentCode
472817
Title
2D Process Modeling and Simulation for VLSI Design
Author
Maldonado, C.D. ; Hall, W.F. ; Murphy, W.O. ; Louie, S.A.
Author_Institution
Rockwell International Corporation Anaheim, CA
fYear
1981
fDate
9-11 Sept. 1981
Firstpage
88
Lastpage
89
Keywords
Boron; Boundary value problems; Fabrication; Geometry; Implants; Ion implantation; MOS devices; Process design; Solid modeling; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location
Maui, HI, USA
Type
conf
Filename
4480540
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