DocumentCode
472819
Title
Feasibility Study of SOS VLSI: Capacitance Analysis in Downward Scaling and Improvement of Thin Films by a Solid-Phase Epitaxy
Author
Taguchi, Shinji ; Yoshii, Toshio ; Uchida, Yukimasa ; Tango, Hiroyuki
Author_Institution
Semiconductor Device Engineering Lab., R & D Center, Toshiba Corporation 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
fYear
1981
fDate
9-11 Sept. 1981
Firstpage
92
Lastpage
93
Keywords
Crystallization; Epitaxial growth; Leakage current; Optical scattering; Parasitic capacitance; Semiconductor thin films; Silicon; Thin film devices; Transistors; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location
Maui, HI, USA
Type
conf
Filename
4480542
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