DocumentCode
474504
Title
Predictive formulae for OPC with applications to lithography-friendly routing
Author
Chen, Tai-Chen ; Liao, Guang-Wan ; Chang, Yao-Wen
fYear
2008
fDate
8-13 June 2008
Firstpage
510
Lastpage
515
Abstract
Due to the sub-wavelength lithography, manufacturing sub-90 nm feature sizes require intensive use of resolution-enhancement techniques, among which optical proximity correction (OPC) is the most popular technique in industry. Considering the OPC effects during routing can significantly alleviate the cost of post-layout OPC operations. In this paper, we present an efficient, accurate, and economical analytical formula for intensity computation and develop the first modeling of post-layout OPC based on a quasi- inverse lithography technique. Extensive simulations with SPLAT, the golden lithography simulator in academia and industry, show that our intensity formula has high fidelity. Incorporating the OPC costs computed by the quasi-inverse lithography technique for our post-layout OPC modeling into a router, the router can be guided to maximize the effects of the correction. Compared with a rule- based OPC method, the experimental results show that our approach can achieve 14% and 16% reductions in the maximum and average layout distortions, respectively.
Keywords
nanolithography; optimisation; proximity effect (lithography); semiconductor process modelling; OPC-effect optimization; SPLAT simulations; intensity modeling; lithography applications; lithography routing; optical proximity correction; post-layout OPC modeling; quasiinverse lithography technique; Algorithm design and analysis; Computational modeling; Costs; Integrated circuit layout; Lithography; Manufacturing industries; Optical distortion; Permission; Routing; Wire; DFM; Lithography; OPC; RET; Routing;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference, 2008. DAC 2008. 45th ACM/IEEE
Conference_Location
Anaheim, CA
ISSN
0738-100X
Print_ISBN
978-1-60558-115-6
Type
conf
Filename
4555870
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