Interaction and cooling of the indirect excitons in elevated traps

Author

High, A.A. ; Hammack, A.T. ; Butov, L.V. ; Mouchliadis, L. ; Ivanov, A.L. ; Hanson, M. ; Gossard, A.C.

Author_Institution

Dept. of Phys., Univ. of California at San Diego, La Jolla, CA

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We present studies of 2D indirect excitons in an in-plane trap created by a laterally modulated gate voltage. Our data indicates an effective evaporative cooling of excitons in the elevated trap regime. We also observed narrow PL lines which correspond to the emission of localized and delocalized states of the indirect excitons in the trap. The homogeneous line broadening due to interaction increases with density and dominates the linewidth of the indirect exciton emission at high densities.

Keywords

excitons; photoluminescence; semiconductor quantum wells; 2D indirect excitons; delocalized states; elevated traps; evaporative cooling; homogeneous line broadening; in-plane trap; laterally modulated gate voltage; narrow PL lines; Astronomy; Charge carrier processes; Cooling; Excitons; Optical scattering; Particle scattering; Physics; Spectroscopy; Temperature; Voltage; (300.6470) Spectroscopy, semiconductors;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572847