DocumentCode
483105
Title
Research on loss model and junction temperature of IGBT for electric vehicles using PSPICE
Author
Hu, Wei ; Wen, Xuhui ; Wen, Huiqing ; Liu, Jun
Author_Institution
Inst. of Electr. Eng., Chinese Acad. of Sci., Beijing
fYear
2008
fDate
17-20 Oct. 2008
Firstpage
4123
Lastpage
4126
Abstract
IGBT is one of the key components of motor driving system for electric vehicles, and its reliability directly affects the reliability of the electric vehicles. The reliability of the IGBT is affected by the loss and the junction temperature in working condition. To predict the IGBTpsilas loss and thermal response, especially in the case of adverse dynamic conditions, the dynamic loss model and the junction temperature of power IGBT are studied in this paper. This model is then applied to simulate the loss of Eupecpsilas power IGBT FS450R12KE3 used in a motor driving system for electric vehicles developed by the Institute of Electrical Engineering Chinese Academy of Sciences. Simulation results accurately match the measurement. This work can be extended to evaluate power IGBTs in other automotive application such as DC/DC conversion, EPAS and so on.
Keywords
SPICE; electric vehicles; insulated gate bipolar transistors; motor drives; power engineering computing; DC-DC conversion; Eupec power IGBT FS450R12KE3; PSPICE; automotive application; electric vehicles; junction temperature; loss model; motor driving system; power IGBT; thermal response; Automotive applications; Electric vehicles; Employee welfare; Insulated gate bipolar transistors; Power system modeling; Power system reliability; Predictive models; SPICE; Temperature; Vehicle dynamics;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Machines and Systems, 2008. ICEMS 2008. International Conference on
Conference_Location
Wuhan
Print_ISBN
978-1-4244-3826-6
Electronic_ISBN
978-7-5062-9221-4
Type
conf
Filename
4771509
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