Potential barrier based clamp: A new device structure for low voltage triggering

This paper presents a flexible low voltage trigger structure based on a pinched-off JFET potential barrier. It has low leakage, low trigger voltage that can be controlled by the gate, and does not require high doping levels. In this work, the proposed JFET has been used to trigger a vertical NPN transistor to create a low voltage transient voltage suppressor. The fabricated low voltage TVS has low leakage and low capacitance loading and excellent clamping at high current.