• DocumentCode
    48448
  • Title

    Motional Resistance Issue of TSV-Based Resonator Device and Its Improvement With a Concave Cu TSV Structural Design

  • Author

    Jian-Yu Shih ; Yen-Chi Chen ; Chih-Hung Chiu ; Kuan-Neng Chen

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    35
  • Issue
    8
  • fYear
    2014
  • fDate
    Aug. 2014
  • Firstpage
    865
  • Lastpage
    867
  • Abstract
    Motional resistance of TSV-based resonator devices with 3D integration techniques is investigated at the operating oscillating mode. Even with well-developed TSV and device fabrication, the motional resistance issue of the TSV-based resonator device is found due to the poor connected Ag paste. The corresponding solution is demonstrated by a modified concave Cu TSVs structure. This modified concave Cu TSV design shows the excellent device characteristics and no visible gaps between the Cu TSVs and resonator devices to insure a good electrical connection.
  • Keywords
    copper; crystal resonators; integrated circuit interconnections; silver; three-dimensional integrated circuits; 3D integration; Ag; Cu; TSV based resonator device; concave TSV structural design; motional resistance; through silicon via; Capacitance; Crystals; Frequency measurement; Resistance; Resonant frequency; Three-dimensional displays; Through-silicon vias; Three-dimensional (3D) integration; concave through silicon via (TSV); motional resistance; motional resistance.;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2014.2327117
  • Filename
    6832492