DocumentCode
493338
Title
Reliability of RF MEMS switches due to charging effects and their circuital modelling
Author
Marcelli, Romolo ; Bartolucci, Giancarlo ; Papaioannu, George ; De Angelis, Giorgio ; Lucibello, Andrea ; Proietti, Emanuela ; Margesin, Benno ; Giacomozzi, Flavio ; Deborgies, François
Author_Institution
CNR-IMM Roma, Rome
fYear
2009
fDate
1-3 April 2009
Firstpage
313
Lastpage
316
Abstract
The reliability of RF MEMS switches is typically reduced by charging effects occurring in the dielectrics. The aim of this paper is to discuss these effects, and to propose an equivalent circuit model which accounts for most of the physical contributions present in the structure.
Keywords
dielectric devices; equivalent circuits; microswitches; microwave switches; semiconductor device models; semiconductor device reliability; RF MEMS switches; charging effects; dielectrics; equivalent circuit model; reliability; Bridge circuits; Dielectrics; Equivalent circuits; Polarization; Radiofrequency microelectromechanical systems; Solid state circuits; Space charge; Switches; Switching circuits; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Test, Integration & Packaging of MEMS/MOEMS, 2009. MEMS/MOEMS '09. Symposium on
Conference_Location
Rome
Print_ISBN
978-1-4244-3874-7
Type
conf
Filename
4919543
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