DocumentCode
498031
Title
A CMOS image sensor with 2.5-e− random noise and 110-ke− full well capacity using column source follower readout circuits
Author
Kohara, Takahiro ; Lee, Woonghee ; Akahane, Nana ; Mizobuchi, Koichi ; Sugawa, Shigetoshi
Author_Institution
Graduate School of Engineering, Tohoku University, 6-6-11 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
fYear
2009
fDate
16-18 June 2009
Firstpage
182
Lastpage
183
Abstract
A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 in a lateral overflow integration capacitor technology. The 1/4-inch, 4.5-µm pitch, 800H × 600V pixels CMOS image sensor fabricated by a 0.18-µm 2P3M technology including a buried pinned photo-diode structure has achieved fully linear response, 0.98 column readout gain, 100-µV/e− conversion gain, 2.5-e− random noise, 110,000-e− full well capacity and 93-dB dynamic range in one exposure.
Keywords
CMOS image sensors; CMOS technology; Circuit noise; Image sensors; Noise reduction; Performance gain; Pixel; Shift registers; Switches; Switching circuits; CMOS image sensor; column amplifier; full well capacity and lateral overflow integration; noise;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 2009 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
978-1-4244-3307-0
Electronic_ISBN
978-4-86348-001-8
Type
conf
Filename
5205397
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