Beam shaping of GaN/InGaN vertical-injection light emitting diodes via high-aspect-ratio nanorod arrays

Author

Tsai, M.A. ; Yu, Peichen ; Chao, C.L. ; Chiu, C.H. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C. ; Huang, J.J.

Author_Institution

Dept. of Electrophys., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

The enhanced light extraction and collimated output beam profile from GaN/InGaN vertical-injection light emitting diodes are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively-coupled-plasma reactive-ion-etching.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanopatterning; nanophotonics; optical arrays; self-assembly; silicon compounds; sputter etching; wide band gap semiconductors; GaN-InGaN; SiO₂; beam collimation; beam shaping; high-aspect-ratio nanorod arrays; inductively-coupled-plasma reactive-ion-etching; light extraction; nanopatterning; self-assembled silica spheres; vertical-injection light emitting diodes; Etching; Gallium nitride; Light emitting diodes; Optical arrays; Optical collimators; Optical surface waves; Photonics; Self-assembly; Silicon compounds; Substrates; 220.4241; 230.3670;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5224779