Growths of InGaN quantum wells light-emitting diodes on nano-patterned AGOG sapphire substrate using abbreviated growth mode

Author

Ee, Yik-Khoon ; Biser, Jeff ; Cao, Wanjun ; Chan, Helen M. ; Vinci, Richard P. ; Tansu, Nelson

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

Nanoheteroepitaxy of InGaN-based light-emitting diodes on patterned AGOG sapphire by using abbreviated growth mode, leads to significant reduction in dislocation density and 24% increase in efficiency.

Keywords

III-V semiconductors; dislocation density; epitaxial growth; gallium compounds; indium compounds; light emitting diodes; nanopatterning; quantum well devices; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; AGOG sapphire substrate; Al₂O₃; InGaN; abbreviated growth mode; dislocation density; light-emitting diodes; nanoheteroepitaxy; nanopatterning; quantum well growth; Annealing; Epitaxial growth; Etching; Gallium nitride; Light emitting diodes; Nanoscale devices; Nanostructures; Optical buffering; Substrates; Temperature; (230.0250) Optoelectronics; (230.3670) Light-Emitting Diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5224878