DocumentCode
500219
Title
THz generation from InN films based on interference between optical rectification and photocurrent surge
Author
Xu, Guibao ; Ding, Yujie J. ; Zhao, Hongping ; Jamil, Muhammad ; Tansu, Nelson ; Zotova, Ioulia B. ; Stutz, Charles E. ; Diggs, Darnell E. ; Fernelius, Nils ; Hopkins, F. Ken ; Gallinat, Chad S. ; Koblmüller, Gregor ; Speck, James S.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
THz average output power as high as 2.4 microwatts is generated from InN films, with the mechanism being the interference between optical rectification and photocurrent surge.
Keywords
indium compounds; photoconductivity; semiconductor thin films; terahertz wave generation; wide band gap semiconductors; InN; InN films; THz generation; interference mechanism; optical rectification; photocurrent surge; power 2.4 muW; Interference; MOCVD; Molecular beam epitaxial growth; Nonlinear optics; Optical buffering; Optical films; Photoconductivity; Power generation; Surges; Ultrafast optics; (190.4350) Nonlinear optics at surfaces; (320.7110) Ultrafast nonlinear optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225601
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