• DocumentCode
    502694
  • Title

    High Holding Current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation

  • Author

    Mergens, Markus P J ; Russ, Christian C. ; Verhaege, Koen G. ; Armer, John ; Jozwiak, Phillip C. ; Mohn, Russ

  • Author_Institution
    Sarnoff Corporation, 201 Washington Road, Princeton, NJ-08543, USA
  • fYear
    2002
  • fDate
    6-10 Oct. 2002
  • Firstpage
    10
  • Lastpage
    17
  • Abstract
    This paper presents a novel SCR for power line and local I/O ESD protection. The HHI-SCR exhibits a dual ESD clamp characteristic: low-current high-voltage clamping and high-current low-voltage clamping. These operation modes enable latch-up immune normal operation as well as superior full chip ESD protection. The minimum latch current is controlled by device design. The HHI-SCR is demonstrated in 0.10um-CMOS and in a 0.4um-BiCMOS technology. The design is highly area efficient.
  • Keywords
    Anodes; Breakdown voltage; Circuits; Clamps; Dynamic voltage scaling; Electrostatic discharge; Europe; MOS devices; Protection; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
  • Conference_Location
    Charlotte, NC, USA
  • Print_ISBN
    978-1-5853-7040-5
  • Electronic_ISBN
    978-1-5853-7040-5
  • Type

    conf

  • Filename
    5267044