BSIM6: Analog and RF Compact Model for Bulk MOSFET

Author

Chauhan, Yogesh Singh ; Venugopalan, Sarad ; Chalkiadaki, Maria-Anna ; Karim, Muhammed Ahosan Ul ; Agarwal, Harshit ; Khandelwal, Sourabh ; Paydavosi, Navid ; Duarte, Juan Pablo ; Enz, C.C. ; Niknejad, Ali M. ; Chenming Hu

Author_Institution

Electr. Eng. Dept., IIT Kanpur, Kanpur, India

Volume

61

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

234

Lastpage

244

Abstract

BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during both dc and small signal analysis, thus giving excellent results during analog and RF circuit simulations, e.g., harmonic balance simulation. The model is fully scalable with geometry, biases, and temperature. The model has a physical charge-based capacitance model including polydepletion and quantum-mechanical effect thereby giving accurate results in small signal and transient simulations. The BSIM6 model has been extensively validated with industry data from 40-nm technology node.

Keywords

MOSFET; radiofrequency integrated circuits; semiconductor device models; BSIM4 model; BSIM6 model; RF circuit design; RF circuit simulation; RF compact model; analog circuit design; bulk MOSFET model; harmonic balance simulation; physical charge based capacitance model; polydepletion; quantum mechanical effect; size 40 nm; source drain symmetry; Capacitance; Computational modeling; Integrated circuit modeling; Logic gates; MOSFET; Radio frequency; Semiconductor device modeling; Analog; BSIM4; BSIM6; RF; compact model;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2283084

Filename

6632892