• DocumentCode
    505354
  • Title

    Electrochemical processes and characterisation of doped Tio2 thin films; Relationship between preparation conditions and nanostructure

  • Author

    Manea, E. ; Staicu, L. ; Popescu, A. ; Obreja, A.C. ; Dinescu, A. ; Schiopu, V. ; Purica, M.

  • Author_Institution
    IMT, Bucharest, Romania
  • Volume
    1
  • fYear
    2009
  • fDate
    12-14 Oct. 2009
  • Firstpage
    163
  • Lastpage
    166
  • Abstract
    In this paper, we report an experimental study on electrochemical anodization using different acidic electrolytes of high purity Ti thin film deposited on silicon substrate by sputtering. The dependence of pore morphology and pore formation rate on process parameters was evaluated. In order to investigate the crystallization, after anodization, samples were annealed in a quartz tube furnace at different temperatures using nitrogen gas for annealing. The influence of electrolyte composition and annealing temperature on the nanostructure and morphology of the oxide layer and the changes induced by the heat treatment, were also investigated by SEM, FTIR and Raman spectroscopy. TiO2 film was doped with phosphorus and palladium to improve electrical conduction.
  • Keywords
    Fourier transform spectra; Raman spectra; annealing; anodisation; crystallisation; electrical conductivity; infrared spectra; nanofabrication; nanoporous materials; palladium; phosphorus; porous semiconductors; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; sputter deposition; titanium compounds; FTIR spectroscopy; Raman spectroscopy; SEM; Si; TiO2:P; TiO2:Pd; acidic electrolytes; annealing; crystallization; doped nanostructure thin films; electrical conduction; electrochemical anodization; electrochemical process; electrolyte composition; heat treatment; nitrogen gas; pore formation rate; pore morphology dependence; quartz tube furnace; silicon substrate; sputtering deposition; Annealing; Crystallization; Electrochemical processes; Furnaces; Morphology; Semiconductor thin films; Silicon; Sputtering; Substrates; Temperature; Ti thin films; anodization; nanoporous doped oxide; nanostructured thin films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2009. CAS 2009. International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4244-4413-7
  • Type

    conf

  • DOI
    10.1109/SMICND.2009.5336581
  • Filename
    5336581