EOS/ESD sensitivity of phase-change-memories

Author

Tazzoli, Augusto ; Gasperin, Alberto ; Paccagnella, Alessandro ; Meneghesso, Gaudenzio

Author_Institution

DEI, Univ. of Padova, Padova, Italy

fYear

2009

fDate

Aug. 30 2009-Sept. 4 2009

Firstpage

1

Lastpage

8

Abstract

The sensitivity to EOS/ESD events of stand-alone Ge₂Sb₂Te₅ (GST) alloy structures, heart of phase change memories, is here investigated. Analytical storage elements were tested from 3 ns up to 1 ms TLP regimes, studying the impact of both GST and heater widths on the device robustness, and reliability. It is also demonstrated that ESD phenomena can induce the reset of the memory content whether not properly protected. Finally, the correlation between TLP and MM testing is proposed.

Keywords

antimony compounds; chalcogenide glasses; electrostatic discharge; germanium compounds; phase change memories; semiconductor device reliability; semiconductor storage; stability; tellurium compounds; EOS sensitivity; ESD sensitivity; GST alloy structures; Ge₂Sb₂Te₅; TLP testing; analytical storage elements; chalcogenide material; device robustness; electrostatic discharge; machine model testing; phase-change memories; reliability; Earth Observing System; Electrostatic discharge; Germanium alloys; Heart; Phase change memory; Protection; Robustness; Tellurium; Testing; Tin alloys;

fLanguage

English

Publisher

ieee

Conference_Titel

EOS/ESD Symposium, 2009 31st

Conference_Location

Anaheim, CA

Print_ISBN

978-1-58537-176-1

Electronic_ISBN

978-1-58537-176-1

Type

conf

Filename

5340119