A thermodynamic study of ESD and EOS induced pinned layer reversal in GMR sensors

Author

Iben, Icko Eric Timothy

Author_Institution

Tape Head Dev. Group, IBM Co, San Jose, CA, USA

fYear

2009

fDate

Aug. 30 2009-Sept. 4 2009

Firstpage

1

Lastpage

10

Abstract

Most Giant Magnetoresistive GMR sensors use antiparallel (AP) pinned ferromagnets stabilized with Mn-based antiferromagnets (AFMs). We show that with IrMn and PtMn AFMs, the thermodynamics of the reversal of the pinned layer magnetic orientation following a reverse bias current is governed by an Arrhenius temperature dependence associated with the AP pinned ferromagnets rather than a Blocking, Neacuteel or Curie temperature.

Keywords

antiferromagnetic materials; cobalt alloys; electrostatic discharge; ferromagnetic materials; giant magnetoresistance; iridium alloys; iron alloys; magnetic sensors; magnetoresistive devices; manganese alloys; platinum alloys; thermodynamics; Arrhenius temperature dependence; CoFe-IrMn; CoFe-PtMn; EOS; ESD; GMR sensors; antiferromagnets; antiparallel pinned ferromagnets; giant magnetoresistive sensors; pinned layer magnetic orientation; pinned layer reversal; reverse bias current; thermodynamics; Earth Observing System; Electrostatic discharge; Gas detectors; Giant magnetoresistance; Magnetic sensors; Magnetic shielding; Temperature dependence; Temperature sensors; Thermal sensors; Thermodynamics;

fLanguage

English

Publisher

ieee

Conference_Titel

EOS/ESD Symposium, 2009 31st

Conference_Location

Anaheim, CA

Print_ISBN

978-1-58537-176-1

Electronic_ISBN

978-1-58537-176-1

Type

conf

Filename

5340120