Experimental analysis of two measurement techniques to characterize photodiode linearity

Author

Ramaswamy, Anand ; Nunoya, Nobuhiro ; Piels, Molly ; Johansson, Leif A. ; Coldren, Larry A. ; Bowers, John E. ; Hastings, Alexander S. ; Williams, Keith J. ; Klamkin, Jonathan

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA

fYear

2009

fDate

14-16 Oct. 2009

Firstpage

1

Lastpage

4

Abstract

As photodiodes become more linear, accurately characterizing their linearity becomes very challenging. We compare the IMD3 results from a standard two tone measurement to those from a more complex three tone measurement technique. A Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) substrate is used for the comparison. Additionally, we analyze, via simulation, the limitations of the measurement system in determining the distortion of highly linear photodiodes.

Keywords

elemental semiconductors; germanium; microwave photonics; optical waveguides; p-i-n photodiodes; photodetectors; rib waveguides; silicon; silicon-on-insulator; Ge-Si; linearity; measurement technique; n-i-p waveguide photodetector; photodiodes; rib waveguide; silicon-on-Insulator substrate; third order intermodulation distortion; third order output intercept points; Artificial neural networks; Biological neural networks; Dielectric substrates; Linearity; Measurement techniques; Microstrip antennas; Neural networks; Neurons; Patch antennas; Photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2009. MWP '09. International Topical Meeting on

Conference_Location

Valencia

Print_ISBN

978-1-4244-4788-6

Type

conf

Filename

5342592