• DocumentCode
    505713
  • Title

    40-Gbps direct modulation of 1.55-µm AlGaInAs semi-insulating buried-heterostructure distributed reflector lasers up to 85°C

  • Author

    Uetake, A. ; Otsubo, K. ; Matsuda, M. ; Okumura, S. ; Ekawa, M. ; Yamamoto, T.

  • Author_Institution
    Optoelectron. Ind. & Technol. Dev. Assoc. (OITDA), Tokyo, Japan
  • fYear
    2009
  • fDate
    4-8 Oct. 2009
  • Firstpage
    839
  • Lastpage
    840
  • Abstract
    1.55-mum AlGaInAs semi-insulating buried-heterostructure distributed reflector lasers with 75-mum-long active region achieved very high slope values of relaxation oscillation frequency of 4.5 (25degC) and 3.5 GHz/mA1/2 (85degC), which realized 40-Gbps direct modulation up to 85degC.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; optical modulation; quantum well lasers; AlGaInAs; bit rate 40 Gbit/s; direct modulation; distributed reflector lasers; quantum well lasers; relaxation oscillation frequency; semi-insulating buried-heterostructure; temperature 25 degC; temperature 85 degC; wavelength 1.55 mum; Coatings; Frequency; Laboratories; Laser feedback; Power generation; Power lasers; Quantum well devices; Temperature; Threshold current; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
  • Conference_Location
    Belek-Antalya
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-3680-4
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2009.5343421
  • Filename
    5343421
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=505713