• DocumentCode
    505742
  • Title

    GaN based active matrix light emitting diode array by flip-chip technology

  • Author

    Liu, Zhao Jun ; Keung, Chi Wing ; Lau, Kei May

  • Author_Institution
    Dept of Electron. & Comput. Eng., Hong Kong Univ. of Sci.&Technol., Kowloon, China
  • fYear
    2008
  • fDate
    Oct. 30 2008-Nov. 2 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper reports the first GaN based active matrix light emitting diode (AMLED) array. The array, fabricated by CMOS compatible process and flip-chip technology, can control the LED pixel individually and exhibit excellent emission uniformity.
  • Keywords
    CMOS integrated circuits; III-V semiconductors; flip-chip devices; gallium compounds; light emitting diodes; wide band gap semiconductors; CMOS compatible process; LED; emission uniformity; flip-chip technology; gallium nitride-based active matrix light emitting diode array; Active matrix technology; CMOS process; CMOS technology; Capacitors; Circuits; Fabrication; Gallium nitride; Light emitting diodes; Optical arrays; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-55752-863-6
  • Electronic_ISBN
    978-1-55752-863-6
  • Type

    conf

  • Filename
    5348567
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=505742