DocumentCode
505930
Title
The optimal design of GaAs/GaAlAs asymmetric coupled quantum well for electro-optical switch
Author
Xu, Zhi Xin
Author_Institution
Coll. of Sci., Zhejiang Univ. of Sci. & Technol., Hangzhou, China
fYear
2008
fDate
Oct. 30 2008-Nov. 2 2008
Firstpage
1
Lastpage
3
Abstract
Based on perfect work condition for electro-optical switch, the structure of a GaAs/GaAlAs asymmetric coupled quantum-well is optimized, consequently the optimized coupled quantum well has a large electric field induced refractive index change.
Keywords
III-V semiconductors; electro-optical effects; electro-optical switches; gallium arsenide; gallium compounds; optical design techniques; optical materials; quantum well devices; refractive index; semiconductor quantum wells; GaAs-GaAlAs; electric field induced refractive index changes; electro-optical switch; optimized asymmetric coupled quantum well structure design; Design optimization; Educational institutions; Excitons; Gallium arsenide; Low voltage; Optical character recognition software; Quantum wells; Refractive index; Switches; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location
Shanghai
Print_ISBN
978-1-55752-863-6
Electronic_ISBN
978-1-55752-863-6
Type
conf
Filename
5348758
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