DocumentCode
50690
Title
Switching of Dipole Coupled Multiferroic Nanomagnets in the Presence of Thermal Noise: Reliability of Nanomagnetic Logic
Author
Fashami, Mohammad Salehi ; Munira, Kamaram ; Bandyopadhyay, Supriyo ; Ghosh, Avik W. ; Atulasimha, Jayasimha
Author_Institution
Dept. of Mech. & Nucl. Eng., Virginia Commonwealth Univ., Richmond, VA, USA
Volume
12
Issue
6
fYear
2013
fDate
Nov. 2013
Firstpage
1206
Lastpage
1212
Abstract
The stress-induced switching behavior of a multiferroic nanomagnet, dipole coupled to a hard nanomagnet, is numerically studied by solving the stochastic Landau-Lifshitz-Gilbert equation for a single-domain macrospin state. Different factors were found to affect the switching probability in the presence of thermal noise at room temperature: 1) dipole coupling strength, 2) stress levels, and 3) stress withdrawal rates (ramp rates). We report that the thermal broadening of the magnetization distribution causes large switching error rates. This could render nanomagnetic logic schemes that rely on dipole coupling to perform Boolean logic operations impractical whether they are clocked by stress or field or other means.
Keywords
logic devices; magnetic switching; magnetisation; magnetoelectronics; multiferroics; nanomagnetics; permanent magnets; reliability; stochastic processes; thermal noise; Boolean logic operations; dipole coupled multiferroic nanomagnet switching; dipole coupling strength; hard nanomagnet; magnetization distribution; nanomagnetic logic reliability; nanomagnetic logic schemes; single-domain macrospin state; stochastic Landau-Lifshitz-Gilbert equation; stress levels; stress withdrawal rates; stress-induced switching behavior; switching error rates; switching probability; thermal broadening; thermal noise; Couplings; Magnetization; Magnetomechanical effects; Perpendicular magnetic anisotropy; Stress; Switches; Landau–Lifshitz–Gilbert (LLG) equation; nanomagnetic logic (NML); reliability; straintronics–spintronics; thermal noise;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2013.2284777
Filename
6632926
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