• DocumentCode
    510489
  • Title

    Nitrogen plasma enhanced quantum well intermixing in InGaAsP/InP laser structure

  • Author

    Peng, Shenghua ; Zhang, Xin ; He, Jian-Jun

  • Author_Institution
    Center for Integrated Optoelectronics, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, China, 310027
  • fYear
    2009
  • fDate
    2-6 Nov. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Experimental results on a new method of plasma enhanced quantum well intermixing is presented. Using nitrogen plasma treatment followed by rapid thermal annealing, a 100nm-blueshift of photoluminescence peak is obtained. The new method has much weaker side-effect of etching than previously reported method using Argon plasma.
  • Keywords
    Annealing; Argon; Etching; Indium phosphide; Nitrogen; Plasma applications; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Quantum well lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
  • Conference_Location
    Shanghai, China
  • Print_ISBN
    978-1-55752-877-3
  • Electronic_ISBN
    978-1-55752-877-3
  • Type

    conf

  • Filename
    5377151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=510489