• DocumentCode
    510561
  • Title

    Effect of In and N incorporation on the GaInNAs VCSELs.

  • Author

    Manaf, Nor Azlian Abdul ; Alias, Mohd Sharizal ; Mithani, Sufian Mousa ; Yahya, Mohamed Razman ; Mat, Abdul Fatah Awang

  • Author_Institution
    Microelectronic and Nanotechnology Program, Telekom Malaysia Research and Development, 63000 Cyberjaya, Selangor Darul Ehsan, Malaysia
  • fYear
    2009
  • fDate
    2-6 Nov. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We study the effect of In and N content in GaInNAs material system for application of 1.3 µm vertical cavity surface emitting lasers (VCSEL). The emission wavelength are successfully observed at 1.303 µm wavelength. VCSEL sample with Ga0.58In0.42As QW give the highest output power (0.5694 mW) with threshold current 11mA.
  • Keywords
    Conducting materials; Dielectric materials; Dielectric substrates; Fiber lasers; Optical materials; Semiconductor lasers; Semiconductor materials; Surface emitting lasers; Thermal conductivity; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
  • Conference_Location
    Shanghai, China
  • Print_ISBN
    978-1-55752-877-3
  • Electronic_ISBN
    978-1-55752-877-3
  • Type

    conf

  • Filename
    5377225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=510561