Modeling Electrochemical Etching of Proton Irradiated p-GaAs for the Design of MEMS Building Blocks

We model the electrochemical etching rates of p-type GaAs after proton irradiation using a finite element simulation with input from Monte Carlo simulations of the recoil distribution together with defect to conductivity mapping of implantation isolation data taken from literature. The simulations will allow for the design of advanced microelectromechanical systems through proton beam writing and subsequent electrochemical etching using multiple ion fluences as the novel technique for three-dimensional microstructuring.