Formation of N+/P junction in GaAs using pulsed laser anneal

Author

Ong, C.Y. ; Pey, K.L. ; Wang, X.C. ; Zheng, H.Y. ; Li, Z.P. ; Wong, C.P. ; Shen, Z.X. ; Ong, B.S. ; Ng, C.M. ; Chan, L.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

318

Lastpage

320

Abstract

This work reports the demonstration of using pulsed laser annealing (LA) technique to realize high dopant activation in GaAs. The results show that the defects induced by ion-implantation can be eliminated by pulsed LA. Good crystalline structure is preserved after the laser annealing from the high resolution TEM micrographs. High dopant activation and excellent rectifying characteristic is obtained in the diode activated by high laser fluence.

Keywords

III-V semiconductors; crystal structure; doping profiles; gallium arsenide; laser beam annealing; p-n junctions; rectification; semiconductor diodes; silicon; transmission electron microscopy; zinc; GaAs; GaAs:Si-GaAs:Zn; N+/P junction; crystalline structure; dopant activation; high resolution TEM; pulsed laser annealing; rectifying characteristic; Annealing; CMOS technology; Gallium arsenide; Gold; III-V semiconductor materials; Materials science and technology; Optical pulses; Pulsed laser deposition; Semiconductor diodes; Semiconductor lasers; GaAs diode; laser annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on

Conference_Location

Singapore

Print_ISBN

978-9-8108-2468-6

Type

conf

Filename

5403707