• DocumentCode
    511753
  • Title

    An inductor-less broadband design technique for transimpedance amplifiers

  • Author

    Zhenghao, Lu ; Dandan, Chen ; Seng, Yeo Kiat

  • Author_Institution
    Dept. of Microelectron., Soochow Univ., Suzhou, China
  • fYear
    2009
  • fDate
    14-16 Dec. 2009
  • Firstpage
    232
  • Lastpage
    235
  • Abstract
    An inductor-less bandwidth enhancement technique for transimpedance amplifiers is proposed in this paper, which uses a single capacitor to realize negative capacitance, capacitive source degeneration and capacitive peaking at the same time. Based on this technique, a broadband transimpedance amplifier is designed and simulated in 0.18 ¿m RFCMOS technology. The simulation results show a bandwidth enhancement ratio of 2.5 is achieved without any inductor employed. The proposed TIA circuit is suitable for 10 Gbit/s optical communications and presents the advantages of much less chip area consumption, low-cost and easy of design comparing to inductor based designs.
  • Keywords
    CMOS analogue integrated circuits; operational amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; wideband amplifiers; RFCMOS technology; bandwidth enhancement ratio; broadband transimpedance amplifier; capacitive source degeneration; chip area consumption; inductor based designs; inductorless broadband design technique; negative capacitance; single capacitor; size 0.18 mum; Annealing; Broadband amplifiers; CMOS technology; Gallium arsenide; III-V semiconductor materials; Materials science and technology; Optical pulses; Pulsed laser deposition; Semiconductor diodes; Semiconductor lasers; Broadband; bandwidth enhancement; inductor-less; transimpedance amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on
  • Conference_Location
    Singapore
  • Print_ISBN
    978-9-8108-2468-6
  • Type

    conf

  • Filename
    5403711